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1

Reliability aspects of gate oxide under ESD pulse stress

Adrien Ille, Wolfgang Stadler, Thomas Pompl, Harald Gossner, Tilo Brodbeck, Kai Esmark, Philipp Riess, David Alvarez, Kiran Chatty, Robert Gauthier, Alain Bravaix

Journal:

Microelectronics Reliability

Year:

2009

Language:

english

File:

PDF, 1.38 MB

english, 2009

2

Soft breakdown and hard breakdown in ultra-thin oxides

T. Pompl, C. Engel, H. Wurzer, M. Kerber

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 356 KB

english, 2001

3

A first prospective randomized controlled trial to decrease bacterial load using cold atmospheric argon plasma on chronic wounds in patients

G. Isbary, G. Morfill, H.U. Schmidt, M. Georgi, K. Ramrath, J. Heinlin, S. Karrer, M. Landthaler, T. Shimizu, B. Steffes, W. Bunk, R. Monetti, J.L. Zimmermann, R. Pompl, W. Stolz

Journal:

British Journal of Dermatology

Year:

2010

Language:

english

File:

PDF, 293 KB

english, 2010

4

[IEEE 2012 IEEE Conference on Visual Analytics Science and Technology (VAST) - Seattle, WA, USA (2012.10.14-2012.10.19)] 2012 IEEE Conference on Visual Analytics Science and Technology (VAST) - Visual analytics for the big data era — A comparative review of state-of-the-art commercial systems

Zhang, Leishi, Stoffel, Andreas, Behrisch, Michael, Mittelstadt, Sebastian, Schreck, Tobias, Pompl, Rene, Weber, Stefan, Last, Holger, Keim, Daniel

Year:

2012

Language:

english

File:

PDF, 287 KB

english, 2012

5

The influence of p-polysilicon gate doping on the dielectric breakdown of PMOS devices

G Innertsberger, T Pompl, M Kerber

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 129 KB

english, 2001

6

Influence of gate oxide breakdown on MOSFET device operation

T. Pompl, H. Wurzer, M. Kerber, I. Eisele

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 666 KB

english, 2000

7

Sputter-deposited WBx films

J Willer, S Pompl, D Ristow

Journal:

Thin Solid Films

Year:

1990

Language:

english

File:

PDF, 434 KB

english, 1990

8

The concept of animation: Aspects of tourism services

Journal:

Tourism Management

Year:

1983

Language:

english

File:

PDF, 895 KB

english, 1983

9

Voltage acceleration of time-dependent breakdown of ultra-thin gate dielectrics

Thomas Pompl, Michael Röhner

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 209 KB

english, 2005

10

Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides

T. Pompl, A. Kerber, M. Röhner, M. Kerber

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 300 KB

english, 2006

11

[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - 65nm cmos technology for low power applications

Steegen, A., Mo, R., Mann, R., Sun, M.-C., Eller, M., Leake, G., Vietzke, D., Tilke, A., Guarin, F., Fischer, A., Pompl, T., Massey, G., Vayshenker, A., Tan, W.L., Ebert, A., Lin, W., Gao, W., Lian, J

Year:

2005

Language:

english

File:

PDF, 2.23 MB

english, 2005

12

Impact of failure criteria on the reliability prediction of CMOS devices with ultrathin gate oxides based on voltage ramp stress

Kerber, A., Pompl, T., Rohner, M., Mosig, K., Kerber, M.

Journal:

IEEE Electron Device Letters

Year:

2006

Language:

english

File:

PDF, 306 KB

english, 2006

13

[IEEE 2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) - Anaheim, CA, USA (2007.09.16-2007.09.21)] 2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) - Reliability aspects of gate oxide under ESD pulse stress

Ille, Adrien, Stadler, Wolfgang, Pompl, Thomas, Gossner, Harald, Brodbeck, Tilo, Esmark, Kai, Riess, Philipp, Alvarez, David, Chatty, Kiran, Gauthier, Robert, Bravaix, Alain

Year:

2007

Language:

english

File:

PDF, 1.09 MB

english, 2007

14

Failure Distributions of Successive Dielectric Breakdown Events

Pompl, T., Kerber, M.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2004

Language:

english

File:

PDF, 192 KB

english, 2004

15

Correction to “Comprehensive Methodology for the Statistic of SRAM Vmin”

Pompl, Thomas, Strasser, Rudolf, Drexl, Stefan, Ostermayr, Martin

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2015

Language:

english

File:

PDF, 32 KB

english, 2015

16

Ultra-thin gate oxide reliability in the ESD time domain

Ille, a., Stadler, W., Kerber, a., Pompl, T., Brodbeck, T., Esmark, K., Bravaix, a.

Journal:

Electrical Overstress/Electrostatic Discharge Symposium Proceedings

Year:

2006

Language:

english

File:

PDF, 2.92 MB

english, 2006

17

Extended Methodologies for Using Extreme Value Statistic for SRAM Vmin

Pompl, Thomas, Henkel, Susanne, Stahl, Joachim, Ostermayr, Martin

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2019

Language:

english

File:

PDF, 1.03 MB

english, 2019

18

Qualitätsmanagement im Tourismus () || 5. Qualitätsmanagement in der Hotellerie

Pompl, Wilhelm, Lieb, Manfred G.

Year:

1997

Language:

german

File:

PDF, 552 KB

german, 1997

19

Adaptation of the circular platform spatial memory task for mice: use in detecting cognitive impairment in the APPSW transgenic mouse model for Alzheimer’s disease

Patrick N Pompl, Michael J Mullan, Kimberly Bjugstad, Gary W Arendash

Journal:

Journal of Neuroscience Methods

Year:

1999

Language:

english

File:

PDF, 274 KB

english, 1999

20

Automated epiluminescence microscopy—tissue counter analysis using CART and 1-NN in the diagnosis of Melanoma

Armin Gerger, Wilhelm Stolz, Rene Pompl, Josef Smolle

Journal:

Skin Research and Technology

Year:

2003

Language:

english

File:

PDF, 217 KB

english, 2003

21

Characterization of Microwave Plasma Torch for Decontamination

Tetsuji Shimizu, Bernd Steffes, René Pompl, Ferdinand Jamitzky, Wolfram Bunk, Katrin Ramrath, Matthias Georgi, Wilhelm Stolz, Hans-Ulrich Schmidt, Takuya Urayama, Shuitsu Fujii, Gregor Eugen Morfill

Journal:

Plasma Processes and Polymers

Year:

2008

Language:

english

File:

PDF, 376 KB

english, 2008

22

Complex plasmas – new discoveries in strong coupling physics

G.E. Morfill, A.V. Ivlev, M. Rubin-Zuzic, C.A. Knapek, R. Pompl, T. Antonova, H.M. Thomas

Journal:

Applied Physics B: Lasers and Optics

Year:

2007

Language:

english

File:

PDF, 1.12 MB

english, 2007

23

Ozone-enhanced molecular beam deposition of nickel oxide (NiO) for sensor applications

Alexandra Neubecker, Thomas Pompl, Theodor Doll, Walter Hansch, Ignaz Eisele

Journal:

Thin Solid Films

Year:

1997

Language:

english

File:

PDF, 427 KB

english, 1997

24

Kinetic development of crystallization fronts in complex plasmas

Rubin-Zuzic, M., Morfill, G. E., Ivlev, A. V., Pompl, R., Klumov, B. A., Bunk, W., Thomas, H. M., Rothermel, H., Havnes, O., Fouquét, A.

Journal:

Year:

2006

Language:

english

File:

PDF, 820 KB

english, 2006

25

Cyclo-oxygenase inhibitors and Alzheimer's: are we well ADAPTed?

Giulio Maria Pasinetti, Patrick Nicholas Pompl

Journal:

The Lancet Neurology

Year:

2002

Language:

english

File:

PDF, 94 KB

english, 2002

26

Amyloid immunization in Alzheimer’s disease: do we promote amyloid scavenging at the cost of inflammatory degeneration?

Giulio Maria Pasinetti, Lap Ho, Patrick Pompl

Journal:

Neurobiology of Aging

Year:

2002

Language:

english

File:

PDF, 34 KB

english, 2002

27

AN1792 vaccination immunotherapy in Alzheimer’s disease: the case of a therapy before its time

Giulio Maria Pasinetti, Lap Ho, Patrick Pompl

Journal:

Neurobiology of Aging

Year:

2002

Language:

english

File:

PDF, 34 KB

english, 2002

28

A role of P301L tau mutant in anti-apoptotic gene expression, cell cycle and apoptosis

Z Zhao, L Ho, J Suh, W Qin, H Pyo, P Pompl, H Ksiezak-Reding, G.M Pasinetti

Journal:

Molecular and Cellular Neuroscience

Year:

2003

Language:

english

File:

PDF, 597 KB

english, 2003

29

High-throughput Proteomics and Protein Biomarker Discovery in an Experimental Model of Inflammatory Hyperalgesia: Effects of Nimesulide

C. Gineste, L. Ho, P. Pompl, M Bianchi, Dr G.M. Pasinetti

Journal:

Year:

2003

Language:

english

File:

PDF, 212 KB

english, 2003

30

The effect of low-temperature plasma on bacteria as observed by repeated AFM imaging

Pompl, René, Jamitzky, Ferdinand, Shimizu, Tetsuji, Steffes, Bernd, Bunk, Wolfram, Schmidt, Hans-Ulrich, Georgi, Matthias, Ramrath, Katrin, Stolz, Wilhelm, Stark, Robert W, Urayama, Takuya, Fujii, Shu

Journal:

New Journal of Physics

Year:

2009

Language:

english

File:

PDF, 1.93 MB

english, 2009

31

[IEEE 2006 Design Automation Conference - San Francisco, CA, USA ()] 2006 43rd ACM/IEEE Design Automation Conference - Practical aspects of reliability analysis for IC designs

Pompl, T., Schlunder, C., Hommel, M., Nielen, H., Schneider, J.

Year:

2006

Language:

english

File:

PDF, 3.74 MB

english, 2006

32

[IEEE 2008 IEEE International Reliability Physics Symposium (IRPS) - Phoenix, AZ, USA (2008.04.27-2008.05.1)] 2008 IEEE International Reliability Physics Symposium - TDDB robustness of highly dense 65NM BEOL vertical natural capacitor with competitive area capacitance for RF and mixed-signal applications

Fischer, A.H., Lim, Y.K., Riess, Ph., Pompl, Th., Zhang, B.C., Chua, E.C., Keller, W.W., Tan, J.B., Klee, V., Tan, Y.C., Souche, D., Sohn, D.K., von Glasow, A.

Year:

2008

Language:

english

File:

PDF, 2.20 MB

english, 2008

33

[IEEE 2014 25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) - Saratoga Springs, NY (2014.5.19-2014.5.21)] 25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014) - Trench multiplication process by a sacrificial SiGe epitaxial Layer

Popp, Thomas, Berger, Rudolf, Pompl, Stefan

Year:

2014

Language:

english

File:

PDF, 1.11 MB

english, 2014

34

[IEEE 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual - San Diego, CA, USA (23-25 March 1999)] 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296) - Influence of soft breakdown on NMOSFET device characteristics

Pompl, T., Wurzer, H., Kerber, M., Wilkins, R.C.W., Eisele, I.

Year:

1999

Language:

english

File:

PDF, 494 KB

english, 1999

35

[IEEE 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. - San Jose, CA, USA (April 17-21, 2005)] 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. - Change of acceleration behavior of time-dependent dielectric breakdown by the beol process: indications for hydrogen induced transition in dominant degradation mechanism

Pompl, T., Allers, K.-H., Schwab, R., Hofmann, K., Rochner, M.

Year:

2005

Language:

english

File:

PDF, 1.86 MB

english, 2005

36

[IEEE 2002 IEEE International Reliability Physics Symposium Proceedings. 40th Annual - Dallas, TX, USA (7-11 April 2002)] 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) - Modeling of substrate related extrinsic oxide failure distributions

Pompl, T., Kerber, M., Innertsberger, G., Allers, K.-H., Obry, M., Krasemann, A., Temmler, D.

Year:

2002

Language:

english

File:

PDF, 805 KB

english, 2002

37

[IEEE Conference Digest [Late News Papers volume included]Device Research Conference, 2004. 62nd DRC. - Notre Dame, IN, USA (June 21-23, 2004)] Conference Digest [Late News Papers volume included]Device Research Conference, 2004. 62nd DRC. - N incorporation into ALD HfO/sub 2/ gate dielectric using ion implantation

Li, H.-J., Pompl, T., Young, C., Rhoad, T., Saulters, J., Peterson, J., Gardner, M., Brown, G.A., Bersuker, G., Zoitzoff, P.M., Price, J., Hung, P.Y., Diebold, A., Huff, H.R.

Year:

2004

Language:

english

File:

PDF, 201 KB

english, 2004

38

[IEEE 2010 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2010.06.15-2010.06.17)] 2010 Symposium on VLSI Technology - Highly accurate product-level aging monitoring in 40nm CMOS

Hofmann, K., Rei, H., Ermisch, K., Schlunder, C., Gustin, W., Pompl, T., Georgakos, G., Arnim, K. v., Hatsch, J., Kodytek, T., Baumann, T., Pacha, C.

Year:

2010

Language:

english

File:

PDF, 364 KB

english, 2010

39

[IEEE 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual - San Jose, CA, USA (10-13 April 2000)] 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) - Investigation of ultra-thin gate oxide reliability behavior by separate characterization of soft breakdown and hard breakdown

Pompl, T., Wurzer, H., Kerber, M., Eisele, I.

Year:

2000

Language:

english

File:

PDF, 736 KB

english, 2000

40

[IEEE International Electron Devices Meeting. Technical Digest - Washington, DC, USA (2-5 Dec. 2001)] International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) - Capacitance enhancement techniques for sub-100 nm trench DRAMs

Gutsche, M., Seidl, H., Luetzen, J., Birner, A., Hecht, T., Jakschik, S., Kerber, M., Leonhardt, M., Moll, P., Pompl, T., Reisinger, H., Rongen, S., Saenger, A., Schroeder, U., Sell, B., Wahl, A., Sch

Year:

2001

Language:

english

File:

PDF, 352 KB

english, 2001

41

[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - Long term gate dielectric stress -- a timely method?

Vollertsen, R.-P., Pompl, T., Duschl, R., Kerber, A., Kerber, M., Rohner, M., Schwab, R.

Year:

2006

Language:

english

File:

PDF, 201 KB

english, 2006

42

[IEEE 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual - Phoenix, AZ, USA (2007.04.15-2007.04.19)] 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual - Lifetime Prediction for CMOS Devices with Ultra Thin Gate Oxides Based on Progressive Breakdown

Kerber, A., Rohner, M., Pompl, T., Duschl, R., Kerber, M.

Year:

2007

Language:

english

File:

PDF, 3.83 MB

english, 2007

43

[IEEE 2006 IEEE International Reliability Physics Symposium Proceedings - San Jose, CA, USA (2006.03.26-2006.03.30)] 2006 IEEE International Reliability Physics Symposium Proceedings - Gate Dielectric Integrity along the Road Map of CMOS Scaling including Multi-Gate Fet, TiN Metal Gate, and HfSiON High-k Gate Dielectric

Pompl, T., Mogul, H., Kerber, M., Haase, G., Ogawa, E., McPherson, J., Xiong, W., Schulz, T., Schrufer, K., Cleavelin, R.

Year:

2006

Language:

english

File:

PDF, 2.57 MB

english, 2006

44

[IEEE 2002 World Congress on Computational Intelligence - WCCI'02 - Honolulu, HI, USA (12-17 May 2002)] Proceedings of the 2002 Congress on Evolutionary Computation. CEC'02 (Cat. No.02TH8600) - Circuit design using evolutionary algorithms

Beielstein, T., Dienstuhl, J., Feist, C., Pompl, M.

Year:

2002

Language:

english

File:

PDF, 461 KB

english, 2002

45

Adaptive Encoding Strongly Improves Function Approximation with CMAC

Eldracher, Martin, Staller, Alexander, Pompl, René

Journal:

Neural Computation

Year:

1997

Language:

english

File:

PDF, 282 KB

english, 1997

46

A therapeutic role for cyclooxygenase-2 inhibitors in a transgenic mouse model of amyotrophic lateral sclerosis

Journal:

The FASEB Journal

Year:

2003

Language:

english

File:

PDF, 568 KB

english, 2003

47

Cyclooxygenase (COX)-2 and COX-1 Potentiate -Amyloid Peptide Generation through Mechanisms That Involve -Secretase Activity

Qin, W., Ho, L., Pompl, P. N., Peng, Y., Zhao, Z., Xiang, Z., Robakis, N. K., Shioi, J., Suh, J., Pasinetti, G. M.

Journal:

Journal of Biological Chemistry

Year:

2003

Language:

english

File:

PDF, 860 KB

english, 2003

48

[ACM Press the 43rd annual conference - San Francisco, CA, USA (2006.07.24-2006.07.28)] Proceedings of the 43rd annual conference on Design automation - DAC '06 - Practical aspects of reliability analysis for IC designs

Pompl, T., Schlünder, C., Hommel, M., Nielen, H., Schneider, J.

Year:

2006

Language:

english

File:

PDF, 709 KB

english, 2006

49

[IEEE 30th European Solid-State Device Research Conference - Cork, Ireland (2000.9.11-2000.9.13)] 30th European Solid-State Device Research Conference - Contribution of interface traps to valence band electron tunneling in PMOS devices

Pompl, T., Kerber, M., Wurzer, H., Eisele, I.

Year:

2000

Language:

english

File:

PDF, 69 KB

english, 2000

50

[IEEE 30th European Solid-State Device Research Conference - Cork, Ireland (2000.9.11-2000.9.13)] 30th European Solid-State Device Research Conference - Impact of Gate Oxide Thickness Scaling on Hot-Carrier Degradation in Deep-sub-micron nMOSFETs

Anil, K.G., Pompl, T., Eisele, I.

Year:

2000

Language:

english

File:

PDF, 311 KB

english, 2000

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